Photoluminescence Investigation of Defects Created by Electron Bombardment of 4H-SiC

Photoluminescence Investigation of Defects Created by Electron Bombardment of 4H-SiC

著者名:: J.W. Steeds
掲載資料名:: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006
シリーズ名:: Materials science forum
シリーズ巻号:: 556-557
発行年:: 2007
開始ページ:: 313
終了ページ:: 318
総ページ数:: 6
出版情報:: Stafa-Zuerich: Trans Tech Publications
ISSN:: 02555476
ISBN:: 9780878494422 [0878494421]
言語:: 英語
請求記号:: M23650
資料種別:: 国際会議録

詳細

TDL書誌ID:	ZA00046610
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	6th
会議開催地:	Newcastle upon Tyne, UK
会議開催年:	2006.09.00

類似資料:

1 国際会議録 A Study of the DII Defect after Electron Irradiation and Annealing of 4H SiC W. Sullivan, J.W. Steeds Trans Tech Publications	7 国際会議録 Differentiation between C and Si Related Damage Centres in 4H- and 6H-SiC by the Use of 90-300 kV Electron Irradiation Followed by Low Temperature … Steeds, J.W., Carosella, F., Evans, A.G., Ismail, M.M., Danks, L. R., Voegeli, W. Trans Tech Publications
2 国際会議録 A Combined Photoluminescence aha Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC Sullivan, W., Steeds, J.W., von Bardeleben, H.J., Cantin, J.L. Trans Tech Publications	8 国際会議録 Electron Irradiation of 4H SiC by TEM: An Optical Study Sridhara, S.G., Persson, P.O.Å., Carlsson, F.H.C., Bergman, J.P., Janzen, E., Evans, G., Steeds, J.W. Materials Research Society
3 国際会議録 The Formation and Annealing of Carbon Interstitial-Related Complexes in Electron-, Proton- and Helium Irradiated 4H SiC J.W. Steeds Trans Tech Publications	9 国際会議録 Identification of Neutral Carbon Vacancy-Carbon Anti-Site Complex by Low Temperature Photoluminescence Spectroscopy J.W. Steeds Trans Tech Publications
4 国際会議録 The Formation of Alphabet Lines in 4H SiC after Low-Energy Electron Irradiation J.W. Steeds Trans Tech Publications	10 国際会議録 Identification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H SiC by Photoluminescence Spectroscopy Steeds, J.W., Evans, G.A., Furkert, S., Ley, L., Hundhausen, M., Schulz, N., Pensl, G. Trans Tech Publications
5 国際会議録 Investigation of the Displacement Threshold of Si in 4H SiC Sullivan, W., Steeds, J.W. Trans Tech Publications	11 国際会議録 Further Investigation of Silicon Vacancy-Related Luminescence in 4H and 6H SiC Steeds, J.W., Furkert, S., Hayes, J.M., Sullivan, W. Trans Tech Publications
6 国際会議録 Examination of Two P-Type 4H SiC Samples Having Similar Resistivity but Very Different Radiation Damage and Annealing Characteristics J.W. Steeds Trans Tech Publications	12 国際会議録 Origin of the Up-Conversion Process in 4H SiC Steeds, J.W., Furkert, S.A., Sullivan, W., Wagner, G. Trans Tech Publications

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