Trends in Dopant Incorporation for 3C-SiC Films on Silicon

Trends in Dopant Incorporation for 3C-SiC Films on Silicon

著者名:

M. Zielinski

掲載資料名:

Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

シリーズ名:

Materials science forum

シリーズ巻号:

556-557

発行年:

2007

開始ページ:

207

終了ページ:

212

総ページ数:

6

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494422 [0878494421]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046610
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	6th
会議開催地:	Newcastle upon Tyne, UK
会議開催年:	2006.09.00

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2 国際会議録 Thermally Induced Surface Reorganization of 3C-SiC(111) Epilayers Grown on Silicon Substrates M. Portail, T. Chassagne, S. Roy, C. Moisson, M. Zielinski Trans Tech Publications	8 国際会議録 Influence of Growth Temperature on Site Competition Effects during Chemical Vapor Deposition of 4H-SiC Layers M. Zielinski, T. Chassagne, R. Arvinte, A. Michon, M. Portail, S. Contreras, S. Juillaguet, H. Peyre Trans Tech Publications
3 国際会議録 Low Specific Contact Resistance to 3C-SiC Grown on (100) Si Substrates A.E. Bazin, T. Chassagne, J.F. Michaud, A. Leycuras, M. Portail, M. Zielinski, E. Collard, D. Alquier Trans Tech Publications	9 国際会議録 Micromachining of Thin 3C-SiC Films for Mechanical Properties Investigation J.F. Michaud, S. Jiao, A.E. Bazin, M. Portail, T. Chassagne, M. Zielinski, D. Alquier Materials Research Society
4 国際会議録 Role of Substrate Misorientation in Relaxation of 3C-SiC Layers on Silicon M. Zielinski, M. Portail, S. Roy, S. Kret, T. Chassagne Trans Tech Publications	10 国際会議録 Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI Chassagne, T., Ferro, G., Wang, H., Stoemenos, Y., Peyre, H., Contreras, S., Camassel, J., Monteil, Y., Ghyselen, B. Trans Tech Publications
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