Improved Mesa Designs for the Growth of Thin 4H-SiC Homoepitaxial Cantilevers
- 著者名:
- 掲載資料名:
- Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 556-557
- 発行年:
- 2007
- 開始ページ:
- 117
- 終了ページ:
- 120
- 総ページ数:
- 4
- 出版情報:
- Stafa-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878494422 [0878494421]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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1
国際会議録
Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers
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Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC Mesas
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