Correction of long-range effects applied to the 65-nm node [5853-107]
- 著者名:
Belledent, J. ( Philips Semiconductors (France) ) Word, J. ( Mentor Graphics Corp. (USA) ) Trouiller, Y. ( LETI-CEA (France) ) Couderc, C. ( Philips Semiconductors (France) ) Miramond, C. ( STMicroelectronics (France) ) Toublan, O. ( Mentor Graphics Europe (France) ) Chapon, J.-D. Baron, S. ( STMicroelectronics (France) ) Borjon, A. ( Philips Semiconductors (France) ) Foussadier, F. ( STMicroelectronics (France) ) Gardin, C. Lucas, K. Patterson, K. ( Freescale (France) ) Rody, Y. ( Philips Semiconductors (France) ) Sundermann, F. - 掲載資料名:
- Photomask and Next-Generation Lithography Mask Technology XII
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 5853
- 発行年:
- 2005
- パート:
- 1
- 開始ページ:
- 202
- 終了ページ:
- 210
- 総ページ数:
- 9
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819458537 [0819458538]
- 言語:
- 英語
- 請求記号:
- P63600/5853
- 資料種別:
- 国際会議録
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1
国際会議録
Process window OPC verification: dry versus immersion lithography for the 65 nm node [6154-169]
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4
国際会議録
Improving model-based OPC performance for the 65-nm node through calibration set optimization
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