Lasing characteristics of 1.3 μm atomic layer epitaxy quantum dot laser diode [6352-95]
- 著者名:
Kim, K. W. ( Korea Institute of Science and Technology (South Korea) and Korea Univ. (South Korea) ) Cho, N. K. Song, J. D. Choi, W. J. Lee, J. I. ( Korea Institute of Science and Technology (South Korea) ) Park, J. H. ( Korea Univ. (South Korea) ) - 掲載資料名:
- Optoelectronic materials and devices : 5-7 September, 2006, Gwangju, South Korea
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 6352
- 発行年:
- 2006
- パート:
- 2
- 開始ページ:
- 63522G
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819464477 [0819464473]
- 言語:
- 英語
- 請求記号:
- P63600/6352
- 資料種別:
- 国際会議録
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3
国際会議録
In Situ HREM Study on the Thermal Stability of Atomic Layer Epitaxy Grown InAs/GaAs Quantum Dots
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