Process window enhancement for 45-nm node using alterable transmission phase-shifting materials [6349-19]
- 著者名:
Becker, H. Renno, M. Hess, G. Buttgereit, U. ( Schott Lithotec AG (Germany) ) Koepernik, C. Nedelmann, L. Irmscher, M. ( IMS Chips (Germany) ) Birkner, R. Zibold, A. Scheruebl, T. ( Carl Zeiss SMS GmbH (Germany) ) - 掲載資料名:
- Photomask Technology 2006
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 6349
- 発行年:
- 2006
- パート:
- 1
- 開始ページ:
- 63490J
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819464446 [0819464449]
- 言語:
- 英語
- 請求記号:
- P63600/6349
- 資料種別:
- 国際会議録
類似資料:
SPIE - The International Society of Optical Engineering |
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9
国際会議録
Comparative study of bi-layer attenuating phase-shifting masks for hyper-NA lithography [6283-123]
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Development of a new PSM film system for 157-nm extensible to high-transmission 193 nm lithography
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Antireflection solutions for next generation 193-nm binary and phase-shifting masks [5992-18]
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