The characterization of line-width in mask using spectrophotometry [6283-51]
- 著者名:
Bang, -Y. K. Choi, -H. Y. Yaon, -J. H. Jeong, -Y H. Kim, -H. Y. Choi, -W. S. Yaon, -S. H. Han, -S. W. ( Samsung Electronics Co., Ltd. (South Korea) ) - 掲載資料名:
- Photomask and Next-Generation Lithography Mask Technology XIII
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 6283
- 発行年:
- 2006
- パート:
- 2
- 開始ページ:
- 62832H
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819463586 [0819463582]
- 言語:
- 英語
- 請求記号:
- P63600/6283
- 資料種別:
- 国際会議録
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8
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Effect of line-edge roughness (LER) and line-width roughness (LWR) on sub-100-nm device performance
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Study of higher electron beam energy for the mask production for 30 nm node technology [6283-06]
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