Compact physical modeling of fully depleted SOI MOSFET [6260-62]
- 著者名:
- Zebrev, I. G.
- Gorbunov, S. M. ( Moscow Engineering Physics Institute (Russia) )
- 掲載資料名:
- Micro- and Nanoelectronics 2005
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 6260
- 発行年:
- 2006
- 開始ページ:
- 62601P
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819463258 [0819463256]
- 言語:
- 英語
- 請求記号:
- P63600/6260
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Radiation induced leakage due to stochastic charge trapping in isolation layers of nanoscale MOSFETs
Society of Photo-optical Instrumentation Engineers |
SPIE-The International Society for Optical Engineering |
Society of Photo-optical Instrumentation Engineers |
Kluwer Academic Publishers |
SPIE - The International Society of Optical Engineering |
Electrochemical Society |
SPIE-The International Society for Optical Engineering |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
SPIE - The International Society of Optical Engineering |
Electrochemical Society |