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Structural and electrophysical properties of pseudomorphic GaAs/InGaAs/GaAs quantum wells: effest of thin central AlAs barrier [6260-25]

著者名:
Vasil’evskii, S. I.
Kulbachinskii, A. V. ( M.V. Lomonosov Moscow State Univ. (Russia) )
Lomov, A. A.
Imamov, M. R.
Prokhorov, Yu. D. ( A.V. Shubnikov Institute of Crystallography (Russia) )
Chuev, A. M. ( Institute of Physics and Technology (Russia) )
Galiev, B. G.
Shirokov, S. S. ( Institute of UHF Semiconductor Electronics (Russia) )
さらに 3 件
掲載資料名:
Micro- and Nanoelectronics 2005
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
6260
発行年:
2006
開始ページ:
62600P
出版情報:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819463258 [0819463256]
言語:
英語
請求記号:
P63600/6260
資料種別:
国際会議録

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