High transmission mask technology for 45nm node imaging [6154-38]
- 著者名:
Conley, W. ( Freescale Semiconductor, Inc. (USA) ) Morgana, N. ( Photronics, Inc. (France) ) Kasprowicz, B. S. ( Photronics, Inc. (France) ) Cangemi, M. ( Photronics, Inc. (France) ) , ( Photronics, Inc. (USA) ) Lassiter, M. ( Photronics, Inc. (France) ) Litt, L. C. ( Freescale Semiconductor, Inc. (USA) ) Cottle, R. ( Photronics, Inc. (USA) ) Wu, W. ( Freescale Semiconductor, Inc. (USA) ) Cobb, J. ( Freescale Semiconductor, Inc. (USA) ) Ham, Y. -M. ( Photronics, Inc. (USA) ) Lucas, K. ( Freescale Semiconductor, Inc. (France) ) Roman, B. ( Freescale Semiconductor, Inc. (USA) ) Progler, C. ( Photronics, Inc. (USA) ) - 掲載資料名:
- Optical Microlithography XIX
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 6154
- 発行年:
- 2006
- パート:
- 1
- 開始ページ:
- 615411
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819461971 [0819461970]
- 言語:
- 英語
- 請求記号:
- P63600/6154
- 資料種別:
- 国際会議録
類似資料:
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
4
国際会議録
Comparisons of 9% versus 6% transmission attenuated phase-shift mask for the 65-nm device mode
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
12
国際会議録
Process, design, and optical proximity correction requirements for the 65-nm device generation
SPIE-The International Society for Optical Engineering |