Evaluating resist degradation during reactive ion oxide etching using 193 nm model resist formulations [6153-25]

Evaluating resist degradation during reactive ion oxide etching using 193 nm model resist formulations [6153-25]

著者名:

May, M J ( STMicroelectronics (France) and LIPHT (France) )

Mortini, B ( STMicroelectronics (France) )

Sourd, C ( CEA/LETI (France) )

Perret, D ( Rohn and Haas Electronic Materials (France) )

Chung, D W ( Rohn and Haas Electronic Materials, LLC (USA) )

Barclay, G ( Rohn and Haas Electronic Materials, LLC (USA) )

Brochon, C ( LIPHT (France) )

Hadziioannou, G ( LIPHT (France) )

さらに 3 件

掲載資料名:

Advances in Resist Technology and Processing XXIII

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

6153

発行年:

2006

パート:

1

開始ページ:

61530P

出版情報:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819461964 [0819461962]

言語:

英語

請求記号:

P63600/6153

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016185
シリーズID:	PA00000029
会議名:	SPIE Advanced Lithography : Advances in Resist Technology and Processing
回次:	2006 : 23th
会議開催地:	San Jose, CA, USA
会議開催年:	2006.02.20-2006.02.22

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2 国際会議録 Study of 193-nm resist degradation under various etch chemistries A. Bazin, M. May, E. Pargon, B. Mortini, O. Joubert SPIE - The International Society of Optical Engineering	8 国際会議録 193 nm resist composition using hybrid copolymers of cycloolefin/maleic anhydride (COMA)/methacrylate [6153-14] Rahman, M D, Chakrapani, S, Anyadiegwu, C, Lin, G, Timko, A, Houlihan, F, Rentkiewicz, D, Kudo, T, McKenzie, D, Dammel, … SPIE - The International Society of Optical Engineering
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