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High power AllnGaN-based blue-violet laser diodes (Invited Paper) [6133-25]

著者名:
Nam, O. H. ( Samsung Advanced Institute of Technology (South Korea) )
Ha, K. H. ( Samsung Advanced Institute of Technology (South Korea) )
Ryu, H. Y. ( Samsung Advanced Institute of Technology (South Korea) )
Lee, S. N. ( Samsung Advanced Institute of Technology (South Korea) )
Chang, T. H. ( Samsung Advanced Institute of Technology (South Korea) )
Choi K K ( Samsung Advanced Institute of Technology (South Korea) )
Son J K ( Samsung Advanced Institute of Technology (South Korea) )
Chae J H ( Samsung Advanced Institute of Technology (South Korea) )
Chae S H ( Samsung Advanced Institute of Technology (South Korea) )
Paek H S ( Samsung Advanced Institute of Technology (South Korea) )
Sung Y J ( Samsung Advanced Institute of Technology (South Korea) )
Sakong T ( Samsung Advanced Institute of Technology (South Korea) )
Kim H G ( Samsung Advanced Institute of Technology (South Korea) )
kim K S ( Samsung Advanced Institute of Technology (South Korea) )
Kim Y H ( Samsung Advanced Institute of Technology (South Korea) )
Park, Y. J. ( Samsung Advanced Institute of Technology (South Korea) )
さらに 11 件
掲載資料名:
Novel In-Plane Semiconductor Lasers V
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
6133
発行年:
2006
開始ページ:
61330N
出版情報:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819461759 [081946175X]
言語:
英語
請求記号:
P63600/6133
資料種別:
国際会議録

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