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Size, areal density, and emission energy control of InAs self assemble quantum dots grown on GaAs by selective area molecular beam epitaxy [6129-17]

著者名:
Lin, J. C. C. ( Univ. of Sheffield (United Kingdom) )
Hogg, R A ( Univ. of Sheffield (United Kingdom) )
Hopkinson, M. ( Univ. of Sheffield (United Kingdom) )
Fry, P W ( Univ. of Sheffield (United Kingdom) )
Ross, I M ( Univ. of Sheffield (United Kingdom) )
Cullis, A G ( Univ. of Sheffield (United Kingdom) )
Kolodka, R S ( Univ. of Sheffield (United Kingdom) )
Tartakovskii, A I ( Univ. of Sheffield (United Kingdom) )
Skolnick, M S ( Univ. of Sheffield (United Kingdom) )
さらに 4 件
掲載資料名:
Quantum Dots, Particles, and Nanoclusters III
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
6129
発行年:
2006
開始ページ:
61290G
出版情報:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819461711 [0819461717]
言語:
英語
請求記号:
P63600/6129
資料種別:
国際会議録

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