Microscopic emission properties of nonpolar a-plane GaN grown by HVPE (Invited Paper) [6121-05]

Microscopic emission properties of nonpolar a-plane GaN grown by HVPE (Invited Paper) [6121-05]

著者名:

Paskova, T. ( Univ. of Bremen (Germany) )

Kroeger, R. ( Univ. of Bremen (Germany) )

Paskov, P.P. ( Univ. of Linkoping (Sweden) )

Figge, S. ( Univ. of Bremen (Germany) )

Hommel, D. ( Univ. of Bremen (Germany) )

Monemar, B. ( Univ. of Linkoping (Sweden) )

Haskell, B. ( Univ. of California, Santa Barbara (USA) )

Fini, P. ( Univ. of California, Santa Barbara (USA) )

Speck, J.S. ( Univ. of California, Santa Barbara (USA) )

Nakamura, S. ( Univ. of California, Santa Barbara (USA) )

さらに 5 件

掲載資料名:

Gallium Nitride Materials and Devices

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

6121

発行年:

2006

開始ページ:

612106

出版情報:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819461636 [0819461636]

言語:

英語

請求記号:

P63600/6121

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016155
シリーズID:	PA00000029
会議名:	Photonics West - Optoelectronic Materials and Devices : Gallium Nitride Materials and Devices
回次:	2006
会議開催地:	San Jose, CA, USA
会議開催年:	2006.01.23-2006.01.25

類似資料:

1 国際会議録 Polarization-Dependent Spectroscopy of the Near-Bandgap Excitonic Emission in Free Standing GaN Paskov, P.P., Paskova, T., Holtz, P.O., Monemar, B. Materials Research Society	7 国際会議録 Ammonothermal Growth of GaN Utilizing Negative Temperature Dependence of Solubility in Basic Ammonia Hashimoto, Tadao, Fujito, Kenji, Wu, Feng, Haskell, Benjamin A., Fini, Paul T., Speck, James S., Nakamura, Shuji Materials Research Society
2 国際会議録 High Pressure Annealing of HVPE GaN Free-Standing Films: Redistribution of Defects and Stress Paskova, T., Suski, T., Bockowski, M., Paskov, P. P., Darakchieva, V., Monemar, B., Tuomisto, F., Saarinen, K., … Materials Research Society	8 国際会議録 A New Mechanism in the Growth Process of GaN by HVPE Trassoudaine, A., Aujol, E., Cadoret, R., Paskova, T., Monemar, B. Materials Research Society
3 国際会議録 Strain Evolution and Phonons in AlN/GaN Superlattices Darakchieva, V., Paskov, P.P., Schubert, M., Valcheva, B., Paskova, T., Arwin, H., Monemar, B., Amano, H., Akasaki, I. Materials Research Society	9 国際会議録 Hydride vapour phase homoepitaxial growth of GaN on MOCVD-Grown 'Templates' Paskova, T., Tungasmita, S., Valcheva, E., Svedberg, E. B., Arnaudov, B., Evtimova, S., Persson, P. A., Henry, A., … MRS-Materials Research Society
4 国際会議録 Photoluminescence study of near-surface GaN/AlN superlattices P. P. Paskov, B. Monemar, T. Paskova, S. Kamiyama, H. Amano Society of Photo-optical Instrumentation Engineers	10 国際会議録 Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures Monemar, B., Paskov, P.P., Haratizadeh, H., Pozina, G.R., Bergman, J.P., Kamiyama, S., Iwaya, M., Amano, H., Akasaki, I. SPIE-The International Society for Optical Engineering
5 国際会議録 Growth of bulk GaN by HVPE on pressure grown seeds (Invited Paper) [6121-07] Grzegory, I., tucznik, B., Bockowski, M., Pastuszka, B, Krysko, M., Kamler, G., Nowak, G., Porowski, S. SPIE - The International Society of Optical Engineering	11 国際会議録 Time-Resolved Spectroscopy of Excitons Bound at Shallow Neutral Donors in HVPE GaN Monemar, Bo, Paskov, P. P., Bergman, J. P., Malinuaskas, T., Jarasiunas, K., Toporov, A. A., Shubina, T. V., Usui, A. Materials Research Society
6 国際会議録 Curvature and Strain in Thick HVPE-GaN for Quasi-Substrate Applications Roder, Claudia, Bottcher, Tim, Paskova, Tanya, Monemar, Bo, Hommel, Detlef Materials Research Society	12 国際会議録 Improved characteristics of InGaN multi-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire Hansen, M., Fini, P., Zhao, L., Abare, A., Coldren, L. A., Speck, J. S., DenBaars, S. P. MRS-Materials Research Society

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