Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic InxGal-xP buffered GaAs substrate [6119-21]

Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic InxGal-xP buffered GaAs substrate [6119-21]

著者名:

Liao, Y. S. ( National Chiao Tung Univ. (Taiwan) )
Lin, G. R. ( National Chiao Tung Univ. (Taiwan) )
Kuo, H. -C. ( National Chiao Tung Univ. (Taiwan) )
Feng, M. ( Univ. of Illinois at Urbana-Champaign (USA) )

掲載資料名:

Semiconductor photodetectors III : 25 January 2006, San Jose California, USA

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

6119

発行年:

2006

開始ページ:

61190L

出版情報:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819461612 [081946161X]

言語:

英語

請求記号:

P63600/6119

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016153
シリーズID:	PA00000029
会議名:	Photonics West - Optoelectronic Materials and Devices : Semiconductor photodetectors
回次:	2006 : 3rd
会議開催地:	San Jose, CA, USA
会議開催年:	2006.01.25

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