Blank Cover Image

The Effects of Radiation and Charge Trapping on Reliability of Alternative Gate Dielectrics

著者名:
Felix, J. A.
Shaneyfelt, M. R.
Schwank, J. R.
Dodd, P. E.
Fleetwood, D. M.
Zhou, X. J.
Gusev, E. P.
さらに 2 件
掲載資料名:
Defects in high-κ gate dielectric stacks : nano-electronic semiconductor devices
シリーズ名:
NATO science series. Series 2, Mathematics, physics and chemistry
シリーズ巻号:
220
発行年:
2006
開始ページ:
299
終了ページ:
323
総ページ数:
25
出版情報:
Dordrecht: Springer
ISBN:
9781402043659 [1402043651]
言語:
英語
請求記号:
N17050/220
資料種別:
国際会議録

類似資料:

1 国際会議録 A Nonvolatile MOSFET Memory Device Based on Mobile Protons in the Gate Dielectric

Vanheusden, K., Warren, W. L., Fleetwood, D. M., Devine, R. A. B., Draper, B. L., Schwank, J. R., Shaneyfelt, M. R., …

MRS - Materials Research Society
7 国際会議録 Radiation-Induced Trapped Charging Effects in SiC Power MOSFETs

R. Green, A. Lelis, D. Urciuoli, M. Litz, J. Carroll

Trans Tech Publications
2 国際会議録 Hydrogen Model for Negative Bias Temperature Instabilities in MOS Gate Dielectrics

Fleetwood, D.M., Zhou, X.J., Tsetseris, L., Pantelides, S.T., Schrimpf, R.D.

Electrochemical Society
8 国際会議録 Performance and Reliability of Scaled Gate Dielectrics

Paulson, W. M., Tobin, P. J., Tseng, H-H., Maiti, B., Gelatos, C., Hegde, R. I., Anderson, S. G. H.

MRS - Materials Research Society
3 国際会議録 Alternative Gate Dielectric Materials

S. Van Elshocht, A. Hardy, S. De Gendt, C. Adelmann, P. K. Baumann, D. P. Brunco, M. R. Caymax, F. Conard, P. Delugas, …

Electrochemical Society
9 国際会議録 Alternative Magnesium Calcium Oxide Gate Dielectric for Silicon Carbide MOS Application

D. O. Stodilka, A. P. Gerger, M. Hlad, P. Kumar, B. P. Gila, R. Singh, C. R. Abernathy, S. J. Pearton, F. Ren

Materials Research Society
4 国際会議録 Identification of Radiation-Induced Parasitic Leakage Paths Using Light Emission Microscopy

Shaneyfelt, Marty, Tangyunyong, Paiboon, Hill, Thomas A., Soden, Jerry M., Flores, Richard S., Schwank, James R., Dodd, …

ESA Publication Division
10 国際会議録 1/f noise in SOI buried oxides and alternative dielectrics to Si02 (Invited Paper)

Fleetwood, D. M., Xiong, H. D., Lin, J. S.

SPIE - The International Society of Optical Engineering
5 国際会議録 Low-frequency noise and radiation response of buried oxides in SOI nMOS transistors

Xiong, H.D., Fleetwood, D.M., Schwank, J.R.

SPIE-The International Society for Optical Engineering
11 国際会議録 Direct Observation of Mobile Protons in SiO2 Thin Films: Potential Application in a Novel Memory Device

Vanheusden, K., Warren, W. L., Devine, R. A. B., Fleetwood, D. M., Schwank, J. R., Winokur, P. S., Lemnios, Z. J.

MRS - Materials Research Society
6 国際会議録 Field-Induced Reactions of Water Molecules at Si-Dielectric Interfaces

Tsetseris, L., Zhou, X., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T.

Materials Research Society
12 国際会議録 Ultrathin Silicon Oxynitride Gate Dielectrics

Gusev, E.P., D'Emic, C.P., Zabel, T.H., Copel, M.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12