Transient Charging Effects and Its Implications to The Reliablility of High-k Dielectrics

Transient Charging Effects and Its Implications to The Reliablility of High-k Dielectrics

著者名:

Lee, B. H

掲載資料名:

Defects in high-κ gate dielectric stacks : nano-electronic semiconductor devices

シリーズ名:

NATO science series. Series 2, Mathematics, physics and chemistry

シリーズ巻号:

220

発行年:

2006

開始ページ:

161

終了ページ:

175

総ページ数:

15

出版情報:

Dordrecht: Springer

ISBN:

9781402043659 [1402043651]

言語:

英語

請求記号:

N17050/220

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015853
シリーズID:	PA00000025
会議名:	NATO Advanced Research Workshop on Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices
回次:	2005
会議開催地:	St. Petersburg, Russia
会議開催年:	2005.07.11-2005.07.14

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