The Limit of SiC Detector Energy Resolution in Ion Spectometry

The Limit of SiC Detector Energy Resolution in Ion Spectometry

著者名:

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

2

開始ページ:

1477

終了ページ:

1482

総ページ数:

6

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

類似資料:

1 国際会議録 Investigation of the SiC Transistor and Diode Nuclear Detectors at 8 MeV Proton Irradiation Strokan, N. B., Ivanov, A. M., Savkina, N. S., Lebedev, A. A., Kozlovski, V. V., Syvajarvi, M., Yakimova, R. Trans Tech Publications	7 国際会議録 Impact Ionization in 4H-SiC Nuclear Radiation Detectors A.M. Ivanov, M.G. Mynbaeva, A.V. Sadokhin, N.B. Strokan, A.A. Lebedev Trans Tech Publications
2 国際会議録 The Influence of Radiation Defects on the Charge Transport in SiC Nuclear Detectors in Conditions of Elevated Temperatures and Deep Compensation of the … A.M. Ivanov, N.B. Strokan, A.A. Lebedev, V.V. Kozlovski Trans Tech Publications	8 国際会議録 Radiation Hardness of Wide-Bandgap Materials as Exemplified by SiC Nuclear Radiation Detectors A.M. Ivanov, A.V. Sadokhin, N.B. Strokan, A.A. Lebedev, V.V. Kozlovski Trans Tech Publications
3 国際会議録 The Influence of the Extreme Fluences of 8 MeV Protons on Characteristics of SiC Nuclear Detectors Produced by Al Implantation A.M. Ivanov, N.B. Strokan, A.A. Lebedev, V.V. Kozlovski Trans Tech Publications	9 国際会議録 Thin Heavily Compensated 6H-SiC Epilayers as Nuclear Particle Detectors Lebedev, A.A., Strokan, N.B., Ivanov, A.M, Davydov, D.V., Kozlovskii, V.V. Trans Tech Publications
4 国際会議録 Operation of Al-Implanted SiC Nuclear Detectors Subjected to High Radiation Fluences at Temperatures of up to 250°C A.M. Ivanov, N.B. Strokan, A.A. Lebedev, V.V. Kozlovski Trans Tech Publications	10 国際会議録 Uniformity of Properties of 4H-SiC CVD Films under Exposure to Radiation A.M. Ivanov, N.B. Strokan, N.A. Scherbov, A.A. Lebedev Trans Tech Publications
5 国際会議録 4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375°C A.M. Ivanov, E.V. Kalinina, N.B. Strokan, A.A. Lebedev Trans Tech Publications	11 国際会議録 Radiation Hardness of Silicon Carbide Lebedev, A.A., Kozlovski, V.V., Strokan, N.B., Davydov, D.V., Ivanov, A.M., Strel'chuk, A.M., Yakimova, R. Trans Tech Publications
6 国際会議録 p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation Ivanov, A.M., Strokan, N.B., Davydov, D.V., Savkina, N.S., Strelchuk, A.M., Lebedev, A.A., Yakimova, R. Trans Tech Publications	12 国際会議録 N and p Type 6H-SiC Films for the Creation Diode and Triode Structure of Nuclear Particle Detectors Ivanov, A.M., Strokan, N.B., Lebedev, A.A., Davydov, D.V., Savkina, N.S., Bogdanova, E.V. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12