Minimum Ionizing Particle Detector Based on p+n Junction SiC Diode

Minimum Ionizing Particle Detector Based on p+n Junction SiC Diode

著者名:

Moscatelli, F.

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

2

開始ページ:

1469

終了ページ:

1472

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

類似資料:

1 国際会議録 Measurements of Charge Collection Efficiency of p+/n Junction SiC Detectors Moscatelli, F., Scorzoni, A., Poggi, A., Bruzzi, M., Lagomarsino, S., Mersi, S., Sciortino, S., Lazar, M., Placido, A. … Trans Tech Publications	7 国際会議録 Ni-Silicide Contacts to 6H-SiC: Contact Resistivity and Barrier Height on Ion Implanted n-Type and Barrier Height on p-Type Epilayer Moscatelli, F., Scorzoni, A., Poggi, A., Canino, M., Nipoti, R. Trans Tech Publications
2 国際会議録 Effects of Very High Neutron Fluence Irradiation on p+n Junction 4H-SiC Diodes F. Moscatelli, A. Scorzoni, A. Poggi, M. Passini, G. Pizzocchero, R. Nipoti Trans Tech Publications	8 国際会議録 C-V and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al⁺ Implanted JTE p⁺n 4H-SiC Diodes F. Fabbri, F. Moscatelli, A. Poggi, R. Nipoti, A. Cavallini Trans Tech Publications
3 国際会議録 Interracial Properties of SiO2 Grown on 4H-SiC: Comparison between N2O and Wet O2 Oxidation Ambient Poggi, A., Moscatelli, F., Scorzoni, A., Marino, G., Nipoti, R., Sanmartin, M. Trans Tech Publications	9 国際会議録 Electrical Characterization of Ion-Implanted n+/p 6H-SiC Diodes Poggi, A., Nipoti, R., Cardinali, G.C., Moscatelli, F. Trans Tech Publications
4 国際会議録 Contact Resistivity and Barrier Height of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC Scorzoni, A., Moscatelli, F., Poggi, A., Cardinali, G.C., Nipoti, R. Trans Tech Publications	10 国際会議録 Current Analysis of Ion Implanted p+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient Nipoti, R., Bergamini, F., Moscatelli, F., Poggi, A., Canino, M., Bertuccio, G. Trans Tech Publications
5 国際会議録 Extraction of the Schottky Barrier Height for Ti/Al Contacts on 4H-SiC from I-V and C-V Measurements Moscatelli, F., Scorzoni, A., Poggi, A., Cardinali, G.C., Nipoti, R. Trans Tech Publications	11 国際会議録 Correlation between Current Transport and Defects in n+/p 6H-SiC Diodes Canino, M., Castaldini, A., Cavallini, A., Moscatelli, F., Nipoti, R., Poggi, A. Trans Tech Publications
6 国際会議録 Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data Moscatelli, F., Scorzoni, A., Poggi, A., Cardinali, G.C., Nipoti, R. Trans Tech Publications	12 国際会議録 Characterization of Phosphorus Implanted n⁺/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET F. Moscatelli, R. Nipoti, A. Poggi, S. Solmi, S. Cristiani Trans Tech Publications

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