Novel Power Si/4H-SiC Heterojunction Tunneling Transistor (HETT)

Novel Power Si/4H-SiC Heterojunction Tunneling Transistor (HETT)

著者名:

Hayashi, T.

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

2

開始ページ:

1453

終了ページ:

1456

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

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1 国際会議録 New High-Voltage Unipolar Mode p+ Si/n- 4H-SiC Heterojunction Diode Hayashi, T., Tanaka, H., Shimoida, Y., Tanimoto, S., Hoshi, M. Trans Tech Publications	7 国際会議録 4H-SiC ACCUFET with a Two-Layer Stacked Gate Oxide Kaneko, S., Tanaka, H., Shimoida, Y., Kiritani, N., Tanimoto, S., Yamanaka, M., Hoshi, M. Trans Tech Publications
2 国際会議録 Novel Low V_ON Poly-Si/4H-SiC Heterojunction Diode Using Energy Barrier Height Control S. Yamagami, T. Hayashi, M. Hoshi Trans Tech Publications	8 国際会議録 4H-SiC ACCUFET with a Two-Layer Stacked Gate Oxide Kaneko, S., Tanaka, H., Shimoida, Y., Kiritani, N., Tanimoto, S., Yamanaka, M., Hoshi, M. Trans Tech Publications
3 国際会議録 High-Reliability ONO Gate Dielectric for Power MOSFETs Tanimoto, S., Tanaka, H., Hayashi, T., Shimoida, Y., Hoshi, M., Mihara, T. Trans Tech Publications	9 国際会議録 Electrical Characteristics of Al+ Ion-Implanted 4H-SiC Tanaka, H., Tanimoto, S., Yamanaka, M., Hoshi, M. Trans Tech Publications
4 国際会議録 Optimized P-Well Profile Preventing Punch-Through for 4H-SiC Power MOSFETs Shimoida, Y., Kaneko, S., Tanaka, H., Hoshi, M. Trans Tech Publications	10 国際会議録 Electrical Characteristics of Al+ Ion-Implanted 4H-SiC Tanaka, H., Tanimoto, S., Yamanaka, M., Hoshi, M. Trans Tech Publications
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