Dynamic Characteristics of 4H-SiC pin Dlode on (000-1)C-Face with Small Forward Degradation

Dynamic Characteristics of 4H-SiC pin Dlode on (000-1)C-Face with Small Forward Degradation

著者名:

Nakayama, K.

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

2

開始ページ:

1359

終了ページ:

1362

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

類似資料:

1 国際会議録 8.3 kV 4H-SiC PiN Diode on (0001) C-Face with Small Forward Voltage Degradation Nakayama, K., Sugawara, Y., Tsuchida, H., Miyanagi, T., Kamata, I., Nakamura, T., Asano, K., Ishii, R. Trans Tech Publications	7 国際会議録 Novel SiC Zener Diodes with High Operating Temperature of 300°C and High Power Density of 40 kW/cm2 R. Ishii, K. Nakayama, H. Tsuchida, Y. Sugawara Trans Tech Publications
2 国際会議録 Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy Tsuchida, H., Kamata, I., Miyanagi, T., Nakamura, T., Nakayama, K., Ishii, R., Sugawara, Y. Trans Tech Publications	8 国際会議録 Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers Kamata, I., Tsuchida, H., Miyanagi, T., Nakamura, T. Trans Tech Publications
3 国際会議録 Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging R. Ishii, T. Miyanagi, I. Kamata, H. Tsuchida, K. Nakayama, Y. Sugawara Trans Tech Publications	9 国際会議録 4H-SiC Epitaxial Growth for High-Power Devices Tsuchida, H., Kamata, I., Jikimoto, T., Miyanagi, T., Izumi, K. Trans Tech Publications
4 国際会議録 Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes Nakamura, T., Miyanagi, T., Kamata, I., Tsuchida, H. Trans Tech Publications	10 国際会議録 Conditions for Micropipe Dissociation by 4H-SiC CVD Growth Kamata, I., Tsuchida, H., Jikimoto, T., Miyanagi, T., Izumi, K. Trans Tech Publications
5 国際会議録 Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates Tsuehida, H., Miyanagi, T., Kamata, I., Nakamura, T., Izumi, K., Nakayama, K., Ishii, R., Asano, K., Sugawara, Y. Trans Tech Publications	11 国際会議録 Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy H. Tsuchida, I. Kamata, M. Nagano Trans Tech Publications
6 国際会議録 Observation of Shrinking and Reformation of Shockley Stacking Faults by PL Mapping Miyanagi, T., Tsuchida, H., Kamata, I., Nakamura, T., Ishii, R., Nakayama, K., Sugawara, Y. Trans Tech Publications	12 国際会議録 SiC Zener Diode for Gate Protection of 4.5 kV SiCGT K. Nakayama, R. Ishii, K. Asano, T. Miyazawa, H. Tsuchida Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12