High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications

High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications

著者名:

Hull, B.A.

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

2

開始ページ:

1355

終了ページ:

1358

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

類似資料:

1 国際会議録 Progress on the Development of 10 kV 4H-SiC Pin Diodes for High Current/High Voltage Power Handling Applications B.A. Hull, J.J. Sumakeris, M. Das, J. Richmond, J. Palmour Trans Tech Publications	7 国際会議録 High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift Das, M.K., Sumakeris, J.J., Paisley, M.J., Powell, A. Trans Tech Publications
2 国際会議録 Evolution of Drift-Free, High Power 4H-SiC PiN Diodes Das, M.K., Sumakeris, J.J., Hull, B.A., Richmond, J. Trans Tech Publications	8 国際会議録 Development of Large Area (up to 1.5 cm²) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers B.A. Hull, J.J. Sumakeris, M.J. O'Loughlin, Q.J. Zhang, J. Richmond Trans Tech Publications
3 国際会議録 Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields Das, M. K., Sumakeris, J. J., Hull, B. A., Richmond, J., Krishnaswami, S., Powell, A. R. Trans Tech Publications	9 国際会議録 Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs Ryu, S.H., Krishnaswami, S., Hull, B.A., Heath, B., Das, M.K., Richmond, J.T., Agarwal, A.K., Palmour, J.W., Scofield, … Trans Tech Publications
4 国際会議録 High Temperature Characterization of 4H-SiC Bipolar Junction Transistors Krishnaswami, S., Agarwal, A.K., Richmond, J., Capell, C., Ryu, S.H., Palmour, J.W., Geil, B.R., Katsis, D., Scozzie, … Trans Tech Publications	10 国際会議録 Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices J.J. Sumakeris, B.A. Hull, M.J. O'Loughlin, M. Skowronski, V. Balakrishna Trans Tech Publications
5 国際会議録 Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs Agarwal, A.K., Krishnaswami, S., Richmond, J., Capell, C., Ryu, S.H., Palmour, J., Geil, B.R, Katsis, D., Scozzie, C.J., … Trans Tech Publications	11 国際会議録 400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200oC Baseplate Temperature Richmond, J., Ryu, S.H., Krishnaswami, S., Agarwal, A.K., Palmour, J.W., Geil, B.R., Katsis, D., Scozzie, C.J. Trans Tech Publications
6 国際会議録 A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices Krishnaswami, S., Ryu, S.H., Heath, B., Agarwal, A.K., Palmour, J.W., Geil, B.R., Lelis, A.J., Scozzie, C.J. Trans Tech Publications	12 国際会議録 Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300oC NO Anneal Das, M.K., Hull, B.A., Krishnaswami, S., Husna, F., Haney, S., Lelis, A.J., Scozzie, C.J., Scofield, J.D. Trans Tech Publications

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