Evolution of Drift-Free, High Power 4H-SiC PiN Diodes

Evolution of Drift-Free, High Power 4H-SiC PiN Diodes

著者名:

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

2

開始ページ:

1329

終了ページ:

1334

総ページ数:

6

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

類似資料:

1 国際会議録 High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications Hull, B.A., Das, M.K., Richmond, J.T., Heath, B., Sumakeris, J.J., Geil, B.R., Scozzie, C.J. Trans Tech Publications	7 国際会議録 Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices J.J. Sumakeris, B.A. Hull, M.J. O'Loughlin, M. Skowronski, V. Balakrishna Trans Tech Publications
2 国際会議録 Progress on the Development of 10 kV 4H-SiC Pin Diodes for High Current/High Voltage Power Handling Applications B.A. Hull, J.J. Sumakeris, M. Das, J. Richmond, J. Palmour Trans Tech Publications	8 国際会議録 Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process P.A. Ivanov, M.E. Levinshtein, M.S. Boltovets, V.A. Krivutsa, J. Palmour, M. Das, B.A. Hull Trans Tech Publications
3 国際会議録 Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields Das, M. K., Sumakeris, J. J., Hull, B. A., Richmond, J., Krishnaswami, S., Powell, A. R. Trans Tech Publications	9 国際会議録 High-Temperature (up to 800 K) Operation of 6-kV 4F-SiC Junction Diodes Levinshtein, M.E., Ivanov, P.A., Boltovets, M.S., Krivutsa, V.A., Palmour, J.W., Das, M.K., Hull, B.A. Trans Tech Publications
4 国際会議録 High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift Das, M.K., Sumakeris, J.J., Paisley, M.J., Powell, A. Trans Tech Publications	10 国際会議録 Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs Ryu, S.H., Krishnaswami, S., Hull, B.A., Heath, B., Das, M.K., Richmond, J.T., Agarwal, A.K., Palmour, J.W., Scofield, … Trans Tech Publications
5 国際会議録 Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices Sumakeris, J.J., Bergman, J.P., Das, M.K., Hallin, C., Hull, B.A., Janzen, E., Lendenmann, H., O'Loughlin, M.J., … Trans Tech Publications	11 国際会議録 Performance of 60 A, 1200 V 4H-SiC DMOSFETs B.A. Hull, C. Jonas, S.H. Ryu, M.K. Das, M.J. O'Loughlin Trans Tech Publications
6 国際会議録 Development of Large Area (up to 1.5 cm²) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers B.A. Hull, J.J. Sumakeris, M.J. O'Loughlin, Q.J. Zhang, J. Richmond Trans Tech Publications	12 国際会議録 Mechanisms of Stacking Fault Growth in SiC PiN Diodes Stahlbush, R.E., Twigg, M.E., Sumakeris, J.J., Irvine, K.G., Losee, P.A. Materials Research Society

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