Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation
- 著者名:
Potbhare, S. Pennington, G. Goldsman, N. Lelis, A.J. Habersat, D.B. McLean, F.B. McGarrity, J.M. - 掲載資料名:
- Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 527-529
- 発行年:
- 2006
- パート:
- 2
- 開始ページ:
- 1321
- 終了ページ:
- 1324
- 総ページ数:
- 4
- 出版情報:
- Stafa-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878494255 [0878494251]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
Trans Tech Publications |
7
国際会議録
Effect of Band-Edge Interface Traps and Transition Region Mobility on Transport in 4H-SiC MOSFETs
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
6
国際会議録
On Separating Oxide Charges and Interface Charges in 4H-SiC Metal-Oxide-Semiconductor Devices
Trans Tech Publications |
12
国際会議録
Mixed Mode Modeling and Characterization of a 4H-SiC Power DMOSFET Based DC-DC Power Converter
Trans Tech Publications |