A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices
- 著者名:
Krishnaswami, S. Ryu, S.H. Heath, B. Agarwal, A.K. Palmour, J.W. Geil, B.R. Lelis, A.J. Scozzie, C.J. - 掲載資料名:
- Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 527-529
- 発行年:
- 2006
- パート:
- 2
- 開始ページ:
- 1313
- 終了ページ:
- 1316
- 総ページ数:
- 4
- 出版情報:
- Stafa-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878494255 [0878494251]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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4
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Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs
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