Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs

Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs

著者名:

Ryu, S.H.

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

2

開始ページ:

1261

終了ページ:

1264

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

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1 国際会議録 A Comparison of High Temperature Performance of SiC DMOSFETs and JFETs S.H. Ryu, S. Krishnaswami, B.A. Hull, B. Heath, F. Husna, J. Richmond, A. Agarwal, J. Palmour, J. Scofield Trans Tech Publications	7 国際会議録 A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices Krishnaswami, S., Ryu, S.H., Heath, B., Agarwal, A.K., Palmour, J.W., Geil, B.R., Lelis, A.J., Scozzie, C.J. Trans Tech Publications
2 国際会議録 A 1cm x 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules Agarwal, A.K., Krishnaswami, S., Damsky, B., Richmond, J., Capell, C., Ryu, S.H., Palmour, J.W. Trans Tech Publications	8 国際会議録 9 kV 4H-SiC IGBTs with 88 mΩ・cm2 of R diff, on Q.C. Zhang, C. Jonas, B. Heath, M. Das, S.H. Ryu, A. Agarwal, J. Palmour Trans Tech Publications
3 国際会議録 4H-SiC DMOSFETs for High Speed Switching Applications Ryu, S. H., Krishnaswami, S., Das, M., Richmond, J., Agarwal, A., Palmour, J., Scofield, J. Trans Tech Publications	9 国際会議録 Performance of 60 A, 1200 V 4H-SiC DMOSFETs B.A. Hull, C. Jonas, S.H. Ryu, M.K. Das, M.J. O'Loughlin Trans Tech Publications
4 国際会議録 Development of 10 kV 4H-SiC Power DMOSFETs Ryu, S.H., Agarwal, A., Krishnaswami, S., Richmond, J., Palmour, J. Trans Tech Publications	10 国際会議録 Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs Agarwal, A.K., Krishnaswami, S., Richmond, J., Capell, C., Ryu, S.H., Palmour, J., Geil, B.R, Katsis, D., Scozzie, C.J., … Trans Tech Publications
5 国際会議録 400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200oC Baseplate Temperature Richmond, J., Ryu, S.H., Krishnaswami, S., Agarwal, A.K., Palmour, J.W., Geil, B.R., Katsis, D., Scozzie, C.J. Trans Tech Publications	11 国際会議録 First Demonstration of 2.1 kW Output Power at 425 MH2 Using 4H-SiC RF Power BJTs Agarwal, A.K, Husna, F., Haley, J., Bartlow, H., McCalpin, B., Krishnaswami, S., Capell, C., Ryu, S.H., Palmour, J.W. Trans Tech Publications
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