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Analytical Modelling of I-V Characteristics for 4H-SiC Enhancement Mode VJFET

著者名:
Bhatnagar, P.
Horsfall, A.B.
Wright, N.G.
Johnson, C.M.
Vassilevski, K.V.
O'Neill, A.G.
さらに 1 件
掲載資料名:
Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005
シリーズ名:
Materials science forum
シリーズ巻号:
527-529
発行年:
2006
パート:
2
開始ページ:
1195
終了ページ:
1198
総ページ数:
4
出版情報:
Stafa-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878494255 [0878494251]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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