Design, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETs

Design, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETs

著者名:

Zhao, J.H.

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

2

開始ページ:

1191

終了ページ:

1194

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

類似資料:

1 国際会議録 6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETs Zhao, J.H., Tone, K., Li, X., Alexandrov, P., Fursin, L., Weiner, M. Trans Tech Publications	7 国際会議録 Development of High Temperature Lateral HV and LV JFETs in 4H-SiC Y. Zhang, K. Sheng, M. Su, J.H. Zhao, P. Alexandrov Trans Tech Publications
2 国際会議録 10 kV, 87 mΩcm2 Normally-Off 4H-SiC Vertical Junction Field-Effect Transistors Li, Y.Z., Alexandrov, P., Zhang, J.H., Li, L.X., Zhao, J.H. Trans Tech Publications	8 国際会議録 5 kV, 9.5 A SiC JBS Diodes with Non-Uniform Guard Ring Edge Termination for High Power Switching Application J. Hu, L.X. Li, P. Alexandrov, X.H. Wang, J.H. Zhao Trans Tech Publications
3 国際会議録 Design of 1.7 to 14 kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiC Li, X., Zhao, J.H. Trans Tech Publications	9 国際会議録 High Voltage (500V-14kV) 4H-SiC Unipolar Bipolar Darlington Transistors for High-Power and High-Temperature Applications Zhao, J.H., Li, X., Tone, K., Alexandrov, P., Fursin, L., Carter, J., Weiner, M. Trans Tech Publications
4 国際会議録 Optically Triggered Power Switch Based on 4H-SiC Vertical JFET P. Alexandrov, X.Q. Li, J.H. Zhao Trans Tech Publications	10 国際会議録 1836 V, 4.7 mΩ・cm2 High Power 4H-SiC Bipolar Junction Transistor Zhang, J.H., Wu, J., Alexandrov, P., Burke, T., Sheng, K., Zhao, J.H. Trans Tech Publications
5 国際会議録 A Novel High-Voltage Normally-Off 4H-SiC Vertical JFET Zhao, J.H., Li, X., Tone, K., Alexandrov, P., Pan, M., Weiner, M. Trans Tech Publications	11 国際会議録 4,340V, 40 mΩcm2 Normally-Off 4H-SiC VJFET Zhao, J.H., Fursin, L., Alexandrov, P., Li, X., Weiner, M. Trans Tech Publications
6 国際会議録 A Novel High-Voltage Normally-Off 4H-SiC Vertical JFET Zhao, J.H., Li, X., Tone, Kiyoshi, Alexandrov, P., Pan, M., Weiner, M. Trans Tech Publications	12 国際会議録 SiC Solid-State Disconnect for High Power System Applications X.Q. Li, P. Alexandrov, L. Fursin, C. Dries, J.H. Zhao Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12