Fabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical Properties

Fabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical Properties

著者名:

Ota, C.

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

2

開始ページ:

1175

終了ページ:

1178

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

類似資料:

1 国際会議録 Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) C. Ota, J. Nishio, T. Hatakeyama, T. Shinohe, K. Kojima, S.I. Nishizawa, H. Ohashi Trans Tech Publications	7 国際会議録 Reverse Characteristics of a 4H-SiC Schottky Barrier Diode Hatakeyama, T., Shinohe, T. Trans Tech Publications
2 国際会議録 Doping Concentration Optimization for Ultra-Low-Loss 4H-SiC Floating Junction Schottky Barrier Diode (Super-SBD) C. Ota, J. Nishio, K. Takao, T. Hatakeyama, T. Shinohe Trans Tech Publications	8 国際会議録 SiC Device Limitation Breakthrough with Novel Floating Junction Structure on 4H-SiC Adachi, K., Omura, I., Ono, R., Nishio, J., Shinohe, T., Ohashi, H., Arai, K. Trans Tech Publications
3 国際会議録 Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD) Hatakeyama, T., Nishio, J., Shinohe, T. Trans Tech Publications	9 国際会議録 Comparison of Super-Junction Structures in 4H-SiC and Si for High Voltage Applications Adachi, K., Johnson, C.M., Ohashi, H., Shinohe, T., Kinoshita, K., Arai, K. Trans Tech Publications
4 国際会議録 Epitaxial Overgrowth of 4H-SiC for Devices with p-Buried Floating Junction Structure Nishio, J., Ota, C., Shinohe, T., Kojima, K., Okumura, H. Trans Tech Publications	10 国際会議録 V_F Degradation of 4H-SiC PiN Diodes Using Low-BPD Wafers C. Ota, J. Nishio, K. Takao, T. Shinohe Trans Tech Publications
5 国際会議録 Optimization of a SiC Super-SBD Based on Scaling Properties of Power Devices Hatakeyama, T., Ota, C., Nishio, J., Shinohe, T. Trans Tech Publications	11 国際会議録 Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process Hatakeyama, T., Kushibe, M., Watanabe, T., Imai, S., Shinohe, T. Trans Tech Publications
6 国際会議録 Reverse Characteristics of a 4H-SiC Schottky Barrier Diode Hatakeyama, T., Shinohe, T. Trans Tech Publications	12 国際会議録 The Fabrication of 4H-SiC Floating Junction SBDs (FJ_SBDs) H. Yuan, X.Y. Tang, Y.M. Zhang, H.L. Lv Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12