Process Optimisation for <11-2> 4H-SiC MOSFET Applications

Process Optimisation for <11-2> 4H-SiC MOSFET Applications

著者名:

Blanc, C.

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

2

開始ページ:

1051

終了ページ:

1054

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

類似資料:

1 国際会議録 PECVD Deposited TEOS for Field-Effect Mobility Improvement in 4H-SiC MOSFETs on the (0001) and (11-20) Faces Perez-Tomas, A., Godignon, P., Camassel, J., Mestres, N., Souliere, V. Trans Tech Publications	7 国際会議録 Fabrication and Testing of 4H-SiC MESFETs for Analog Functions Circuits A. Devie, D. Tournier, P. Godignon, M. Vellvehi, J. Montserrat Trans Tech Publications
2 国際会議録 Investigation of <1,1,-2,0> Epitaxial Layers Grown on a-Cut 4H-SiC Substrates Blanc, C., Sartel, C., Souliere, V., Juillaguet, S., Monteil, Y., Camassel, J. Trans Tech Publications	8 国際会議録 New Diode Designs Compatible with Vertical 4H-SiC JFET Fabrication Process P. Brosselard, D. Tournier, M. Vellvehi, J. Montserrat, P. Godignon, J. Millan Trans Tech Publications
3 国際会議録 Visible Light Laser Irradiation: a Tool for Implantation Damage Reduction Camassel, J., Peyre, H., Brink, D.J., Zielinski, M., Blanque, S., Mestres, N., Godignon, P. Trans Tech Publications	9 国際会議録 4H-SiC MIS Structures Using Oxidized Ta2Si as High-k Dielectric Perez-Tomas, A., Godignon, P., Mestres, N., Tournier, D., Montserrat, J., Millan, J. Materials Research Society
4 国際会議録 4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N2O Perez-Tomas, A., Tournier, D., Godignon, P., Mestres, N., Millan, J. Trans Tech Publications	10 国際会議録 Temperature Impact on High-Current 1.2kV SiC Schottky Rectifiers Jorda, X., Tournier, D., Rebollo, J., Millan, J., Godignon, P. Trans Tech Publications
5 国際会議録 Evaluation of p-Type Doping for (1120) Epitaxial Layers Grown on α-Cut (1120) 4H-SiC Substrates Blanc, C., Zielinski, M., Souliere, V., Sartel, C., Juillaguet, S., Contreras, S., Camassel, J., Monteil, Y. Trans Tech Publications	11 国際会議録 Temperature-Dependence of Zone-Center Phonon Modes in 4H-SiC Blanc, C., Pernot, J., Camassel, J. Trans Tech Publications
6 国際会議録 Integration of Temperature and Current Sensors in 4H-SiC VDMOS M. Berthou, P. Godignon, P. Brosselard, D. Tournier, J. Millán Trans Tech Publications	12 国際会議録 Double Gate 180V-128mA/mm SiC-MESFET for Power Switch Applications Tournier, D., Vellvehi, M., Godignon, P., Jorda, X., Millan, J. Trans Tech Publications

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