PECVD Deposited TEOS for Field-Effect Mobility Improvement in 4H-SiC MOSFETs on the (0001) and (11-20) Faces

PECVD Deposited TEOS for Field-Effect Mobility Improvement in 4H-SiC MOSFETs on the (0001) and (11-20) Faces

著者名:

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

2

開始ページ:

1047

終了ページ:

1050

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

類似資料:

1 国際会議録 4H-SiC MOSFETs Using Thermal Oxidized Ta2Si Films as High-k Gate Dielectric Perez-Tomas, A., Godignon, P., Mestres, N., Montserrat, J., Millan, J. Trans Tech Publications	7 国際会議録 Homogeneity of Nitrogen and Phosphorus Co-Implants in 4H-SiC: Full Wafer Scale Investigation Blanque, S., Lyonnet, J., Camassel, J., Perez, R., Terziyska, P., Contreras, S., Godignon, P., Mestres, N., Pascual, J. Trans Tech Publications
2 国際会議録 Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFETs Measured in Strong Inversion Perez-Tomas, A., Vellvehi, M., Mestres, N., Millan, J., Vennegues, P., Stoemenos, J. Trans Tech Publications	8 国際会議録 Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals Blanque, S., Perez, R., Godignon, P., Mestres, N., Morvan, E., Kerlain, A., Dua, C., Brylinski, C., Zielinski, M., … Trans Tech Publications
3 国際会議録 Process Optimisation for <11-2> 4H-SiC MOSFET Applications Blanc, C., Tournier, D., Godignon, P., Brink, D.J., Souliere, V., Camassel, J. Trans Tech Publications	9 国際会議録 SiC on SOI Resonators: A Route for Electrically Driven MEMS in Harsh Environment M. Placidi, A. Pérez-Tomás, P. Godignon, N. Mestres, G. Abadal Trans Tech Publications
4 国際会議録 SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps A. Perez-Tomas, M.R. Jennings, P.A. Mawby, J.A. Covington, P. Godignon, J. Millan, N. Mestres Trans Tech Publications	10 国際会議録 Impact of Annealing Temperature Ramps on the Electrical Activation of N+ and P+ Co-Implanted SiC I.ayers Blanque, S., Perez, R., Mestres, N., Contreras, S., Camassel, J., Godignon, P. Trans Tech Publications
5 国際会議録 4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N2O Perez-Tomas, A., Tournier, D., Godignon, P., Mestres, N., Millan, J. Trans Tech Publications	11 国際会議録 Quantitative Evaluation of Implantation Damage and Damage Recovery after Room Temperature Ion-Implantation of N+ and P+ Ions in 6H-SiC Blanque, S., Perez, R., Zielinski, M., Pernot, J., Mestres, N., Pascual, J., Godignon, P., Camassel, J. Trans Tech Publications
6 国際会議録 4H-SiC MIS Structures Using Oxidized Ta2Si as High-k Dielectric Perez-Tomas, A., Godignon, P., Mestres, N., Tournier, D., Montserrat, J., Millan, J. Materials Research Society	12 国際会議録 Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11-20) Face Senzaki, J., Kojima, K., Suzuki, T., Fukuda, K. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12