Ellipsometric and XPS Studies of 4H-SiC/SiO2 Interfaces, and Sacrificial Oxide Stripped 4H-SiC Surfaces

Ellipsometric and XPS Studies of 4H-SiC/SiO2 Interfaces, and Sacrificial Oxide Stripped 4H-SiC Surfaces

著者名:

Guy, O.J.

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

2

開始ページ:

1027

終了ページ:

1030

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

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2 国際会議録 The Formation of Low Resistance Ohmic Contacts to 4H-SiC, Circumventing the Need for Post Annealing, Studied by Specific Contact Resistance Measurements and … Guy, O.J., Pope, G., Blackwood, I., Teng, K.S., Lee, W.Y., Wilks, S.P., Mawby, P.A. Trans Tech Publications	8 国際会議録 Combined N₂O and Phosphorus Passivations for the 4H-SiC/SiO₂ Interface with Oxide Grown at 1400°C H. Rong, Y.K. Sharma, P.A. Mawby Trans Tech Publications
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