Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface
- 著者名:
Dhar, S. Wang, S.R. Ahyi, A.C. Isaacs-Smith, T. Pantelides, S.T. Williams, J.R. Feldman, L.C. - 掲載資料名:
- Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 527-529
- 発行年:
- 2006
- パート:
- 2
- 開始ページ:
- 949
- 終了ページ:
- 954
- 総ページ数:
- 6
- 出版情報:
- Stafa-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878494255 [0878494251]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
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8
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Nitrogen Passivation of the Interface States Near the Conduction Band Edge in 4H-Silicon Carbide
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Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs
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