High Dose High Temperature Ion Implantation of Ge into 4H-SiC

High Dose High Temperature Ion Implantation of Ge into 4H-SiC

著者名:

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

2

開始ページ:

851

終了ページ:

854

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

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2 国際会議録 Structure and Lattice Location of Ge Implanted 4H-SiC T. Kups, K. Tonisch, M. Voelskow, W. Skorupa, A. Konkin Trans Tech Publications	8 国際会議録 Ion Beam Synthesis:A Novel Method of Producing(SiC)1-x(AlN)x Layers Yankov,R.A., Fukarek,W., Voelskow,M., Pezoldt,J., Skorupa,W. Trans Tech Publications
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