SiC Substrate Doping Profiles Using Commercial Optical Scanners
- 著者名:
Caldwell, J.D. Glembocki, O.J. Hansen, D.M. Chung, G. Hobart, K.D. Kub, F.J. - 掲載資料名:
- Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 527-529
- 発行年:
- 2006
- パート:
- 1
- 開始ページ:
- 725
- 終了ページ:
- 728
- 総ページ数:
- 4
- 出版情報:
- Stafa-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878494255 [0878494251]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Development of 3C-SiC SOI Structures using Si on Polycrystalline SiC Wafer Bonded Substrates
Trans Tech Publications |
Kluwer Academic Publishers |
2
国際会議録
Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes
Trans Tech Publications |
8
国際会議録
Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices
Trans Tech Publications |
Trans Tech Publications |
Electrochemical Society |
Electrochemical Society |
Materials Research Society |
Electrochemical Society |
Electrochemical Society |
Trans Tech Publications |
Electrochemical Society |