Wannier-Stark Ladder and Negative Differential Conductance in 4H-SiC

Wannier-Stark Ladder and Negative Differential Conductance in 4H-SiC

著者名:

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

1

開始ページ:

707

終了ページ:

710

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

類似資料:

1 国際会議録 Features of Hot Hole Transport in 6H-SiC V.I. Sankin, P.P. Shkrebiy, A.A. Lepneva, A.G. Ostroumov, R. Yakimova Trans Tech Publications	7 国際会議録 Behavior of Micropipes during Growth in 4H-SiC Vouroutzis, N., Yakimova, R., Syvajarvi, M., Jacobson, H., Stoemenos, J., Janzen, E. Trans Tech Publications
2 国際会議録 Impact Ionization in α-SiC and Avalanche Photoamplifiers Sankin, V.I. Trans Tech Publications	8 国際会議録 The Strong Field Transport in 4H- and 6H-SiC at Low Temperature V.I. Sankin, P.P. Shkrebiy, A.A. Lepneva, A.G. Ostroumov, P.L. Abramov Trans Tech Publications
3 国際会議録 Wannier-Stark Localization Effects in 6H-SiC JFETs Sankin, V. I., Shkrebiy, P. P., Lebedev, A. A. Trans Tech Publications	9 国際会議録 High Growth Rate Epitaxy of Thick 4H-SiC Layers Syvajarvi, M., Yakimova, R., Jacobsson, H., Linnarsson, M. K., Henry, A., Janzen, E. Trans Tech Publications
4 国際会議録 New Efficient Canal of THz Emission from SiC Natural Superlattices in Conditions of Wannier-Stark Localization V.I. Sankin, A.V. Andrianov, A.G. Petrov, S.S. Nagalyuk, P.P. Shkrebiy, A.O. Zachar'in Trans Tech Publications	10 国際会議録 Impact of the Initial Surface Conditions on Defect Appearance in 4H-SiC Epilayers Yakimova, R., Jacobson, H., Syvajarvi, M., Kakanakova-Georgieva, A., Iakimov, T., Virojanadara, C., Johansson, L.I., … Trans Tech Publications
5 国際会議録 The Role of Nitrogen in the Annealing of Vacancies in 4H-SiC Dannefaer, S., Avalos, V., Yakimova, R. Trans Tech Publications	11 国際会議録 Doping-Related Strain in n-Doped 4H-SiC Crystals Jacobson, H., Birch, J., Lindefelt, U., Hallin, C., Henry, A., Yakimova, R., Janzen, E. Trans Tech Publications
6 国際会議録 Behavior of Micropipes during Growth in 4H-SiC Vouroutzis, N., Yakimova, R., Syvaejaervi, M., Jacobson, H., Stoemenos, J., Janzen, E. Trans Tech Publications	12 国際会議録 Impact of the Initial Surface Conditions on Defect Appearance in 4H-SiC Epilayers Yakimova, R., Jacobson, H., Syvaejaervi, M., Kakanakova-Georgieva, A., Iakimov, T., Virojanadara, C., Johansson, L.I., … Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12