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Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition

著者名:
Chung, H.J.
Huh, S.W.
Polyakov, A.Y.
Nigam, S.
Li, Q.
Grim, J.
Skowronski, M.
Glaser, E.R.
Carlos, W.E.
Freitas, J.A.
Fanton, M.A.
さらに 6 件
掲載資料名:
Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005
シリーズ名:
Materials science forum
シリーズ巻号:
527-529
発行年:
2006
パート:
1
開始ページ:
625
終了ページ:
628
総ページ数:
4
出版情報:
Stafa-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878494255 [0878494251]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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1 国際会議録 Deep Electron and Hole Traps in 6H-SiC Bulk Crystals Grown by the Halide Chemical Vapor Deposition

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