Photoluminescence of Phosphorus Doped SiC

Photoluminescence of Phosphorus Doped SiC

著者名:

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

1

開始ページ:

589

終了ページ:

592

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

類似資料:

1 国際会議録 Epitaxial Growth and Characterization of Phosphorus Doped SiC Using TBP as Precursor Henry, A., Janzen, E. Trans Tech Publications	7 国際会議録 Photoluminescence Study of CVD Layers Highly Doped with Nitrogen Forsberg, U., Henry, A., Linnarsson, M. K., Janzen, E. Trans Tech Publications
2 国際会議録 Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC I.G. Ivanov, J. Hassan, A. Henry, E. Janzen Trans Tech Publications	8 国際会議録 Characterization of Bulk and Epitaxial SiC Material Using Photoluminescence Spectroscopy Henry, A., Ellison, A., Forsberg, U., Magnusson, B., Pozina, G., Janzen, E. Trans Tech Publications
3 国際会議録 Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers H. Pedersen, A. Henry, J. Hassan, J.P. Bergman, E. Janzen Trans Tech Publications	9 国際会議録 Characterization of Bulk and Epitaxial SiC Material Using Photoluminescence Spectroscopy Henry, A., Ellison, A., Forsberg, U., Magnusson, B., Pozina, G., Janzen, E. Trans Tech Publications
4 国際会議録 Nitrogen Delta Doping in 4H-SiC Epilayers Henry, A., Storasta, L., Janzen, E. Trans Tech Publications	10 国際会議録 Changes in the Exciton-Related Photoluminescence of 4H- and 6H-SiC Induced by Uniaxial Stress Ivanov,I.G., Lindefelt,U., Henry,A., Egilsson,T., Kordina,O., Janzen,E. Trans Tech Publications
5 国際会議録 Photoluminescence of 8H-SiC A. Henry, I.G. Ivanov, E. Janzén, T. Hatayama, H. Yano Trans Tech Publications	11 国際会議録 Doping-Related Strain in n-Doped 4H-SiC Crystals Jacobson, H., Birch, J., Lindefelt, U., Hallin, C., Henry, A., Yakimova, R., Janzen, E. Trans Tech Publications
6 国際会議録 Donor-Acceptor pair Luminescence of Phosphorus-Aluminum and Nitrogen-Aluminum Pairs in 4H SiC Ivanov, I.G., Henry, A., Janzen, E. Trans Tech Publications	12 国際会議録 Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate X. Li, E. Janzén, A. Henry Trans Tech Publications

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