Effect of Crystal Defects on Reverse I-V Characteristics of 4H-SiC APDs

Effect of Crystal Defects on Reverse I-V Characteristics of 4H-SiC APDs

著者名:

Soloviev, S.I.

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

1

開始ページ:

427

終了ページ:

430

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

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1 国際会議録 Observation of Luminescence from Defects in 4H-SiC APDs Operating in Avalanche Breakdown S.I. Soloviev, P.M. Sandvik, A. Vertiatchikh, K. Dovidenko, H.Y. Cha Trans Tech Publications	7 国際会議録 Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers S.I. Soloviev, K. Matocha, G. Dunne, Z. Stum Trans Tech Publications
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3 国際会議録 Oxidation of Porous 4H-SiC Substrates Soloviev, S., Das, T., Sudarshan, T.S. Trans Tech Publications	9 国際会議録 Study of Forward Voltage Drift in Diffused SiC PiN Diodes Doped by Al or B Maximenko, S., Soloviev, S., Grekov, A., Bolotnikov, A., Gao, Y., Sudarshan, T. S. Trans Tech Publications
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