Selective Epitaxial Growth of3C-SiC on Si Using Hexamethyldisilane in a Resistance Heated MOCVD Reactor

Selective Epitaxial Growth of3C-SiC on Si Using Hexamethyldisilane in a Resistance Heated MOCVD Reactor

著者名:

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

1

開始ページ:

303

終了ページ:

306

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

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2 国際会議録 Epitaxial Growth of SiC on AIN/Spphire Using Hexamethyldisilane by MOVPE Teker, Kasif, Lee, Ki Hoon, Jacob, Chacko, Nishino, Shigehiro, Pirouz, Pirouz Materials Research Society	8 国際会議録 Homo-epitaxial and selective area growth of 4H and 6H silicon carbide using a resistively heated vertical reactor Eshun, E., Taylor, C., Spencer, M. G., Kornegay, K., Ferguson, I., Gurray, A., Stall, R. MRS-Materials Research Society
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