Experimental Observations of Extended Growth of 4H-SiC Webbed Cantilevers

Experimental Observations of Extended Growth of 4H-SiC Webbed Cantilevers

著者名:

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

1

開始ページ:

247

終了ページ:

250

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

類似資料:

1 国際会議録 Hydrogen Gas Sensors Fabricated on Atomically Flat 4H-SiC Webbed Cantilevers P.G. Neudeck, D.J. Spry, A.J. Trunek, L.J. Evans, L.Y. Chen Trans Tech Publications	7 国際会議録 SiC Growth by Solvent-Laser Heated Floating Zone A.A. Woodworth, P.G. Neudeck, A. Sayir, D.J. Spry, A.J. Trunek Trans Tech Publications
2 国際会議録 Improved Mesa Designs for the Growth of Thin 4H-SiC Homoepitaxial Cantilevers A.J. Trunek, P.G. Neudeck, D.J. Spry Trans Tech Publications	8 国際会議録 Measurements of Breakdown Field and Forward Current Stability in 3C-SiC pn Junction Diodes Grown on Step-Free 4H-SiC Neudeck, P.G., Spry, D.J., Trunek, A.J. Trans Tech Publications
3 国際会議録 Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers Neudeck, P.G., Powell, J.A., Trunek, A.J., Spry, D.J. Trans Tech Publications	9 国際会議録 High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas Spry, D.J., Trunek, A.J., Neudeck, P.G. Trans Tech Publications
4 国際会議録 Comparative Growth Behavior of 3C-SiC Mesa Heterofilms with and without Extended Defects Trunek, A.J., Neudeck, P.G., Powell, J.A., Spry, D.J. Trans Tech Publications	10 国際会議録 Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy Neudeck, P.G., Powell, J.A., Spry, D.J., Trunek, A.J., Huang, X., Vetter, W.M., Dudley, M., Skowronski, M., Liu, J. Trans Tech Publications
5 国際会議録 Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC Mesas Du, H., Skowronski, M., Neudeck, P.G., Trunek, A.J., Spry, D.J., Powell, J.A. Trans Tech Publications	11 国際会議録 Absence of Dislocation Motion in 3C-SiC pn Diodes under Forward Bias K.M. Speer, D.J. Spry, A.J. Trunek, P.G. Neudeck, M.A. Crimp, J.T. Hile, C. Burda, P. Pirouz Trans Tech Publications
6 国際会議録 Lateral Growth Expansion of 4H/6H-SiC M-Plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy A.J. Trunek, P.G. Neudeck, A.A. Woodworth, J.A. Powell, D.J. Spry Trans Tech Publications	12 国際会議録 Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 ° C to 500 ° C P.G. Neudeck, D.J. Spry, L.Y. Chen Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12