Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process
- 著者名:
La Via, F. Galvagno, G. Firrincieli, A. Roccaforte, F. Di Franco, S. Ruggiero, A. Barbera, M. Reitano, R. Musumeci, P. Calcagno, L. Foti, G. Mauceri, M. Leone, S. Pistone, G. Portuese, F. - 掲載資料名:
- Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 527-529
- 発行年:
- 2006
- パート:
- 1
- 開始ページ:
- 163
- 終了ページ:
- 166
- 総ページ数:
- 4
- 出版情報:
- Stafa-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878494255 [0878494251]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |
Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |