SiC Warm-Wall Planetary VP E Growth on Multiple 100-mm Diameter Wafers

SiC Warm-Wall Planetary VP E Growth on Multiple 100-mm Diameter Wafers

著者名:

Burk, A.A.

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

1

開始ページ:

159

終了ページ:

162

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

類似資料:

1 国際会議録 Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE Reactor Burk, A. A., O'Loughlin, M. J., Paisley, M. J., Powell, A. R., Brady, M. F., Leonard, R. T., Muller, S. G., Allen, S. T. Trans Tech Publications	7 国際会議録 Large Diameter 4H-SiC Substrates for Commercial Power Applications Powell, A.R., Leonard, R.T., Brady, M.F., Muller, St.G., Tsvetkov, V.F., Trussell, R., Sumakeris, J.J., Hobgood, H.McD., … Trans Tech Publications
2 国際会議録 Exploration of Bulk and Epitaxy Defects in 4H-SiC Using Large Scale Optical Characterization R.T. Leonard, M.J. Paisley, S. Bubel, J.J. Sumakeris, A.R. Powell, Y. Khlebnikov, J.C. Seaman, J. Ambati, A.A. Burk, … Trans Tech Publications	8 国際会議録 Defect Status in SiC Manufacturing E. Berkman, R.T. Leonard, M.J. Paisley, Y. Khlebnikov, M.J. O'Loughlin Trans Tech Publications
3 国際会議録 SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor A.A. Burk, D. Tsvetkov, D. Barnhardt, M.J. O'Loughlin, L. Garrett Trans Tech Publications	9 国際会議録 Status of 4H-SiC Substrate and Epitaxial Materials for Commercial Power Applications Powell, A.R., Sumakeris, J.J., Leonard, R.T., Brady, M.F., Muller, St.G., Tsvetkov, V.F., Hobgood, H.McD., Burk, A.A., … Materials Research Society
4 国際会議録 Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor A.A. Burk, D. Tsvetkov, M.J. O'Loughlin, S. Ustin, L. Garrett Trans Tech Publications	10 国際会議録 Bulk Growth of Large Area SiC Crystals A.R. Powell, J.J. Sumakeris, Y. Khlebnikov, M.J. Paisley, R.T. Leonard Trans Tech Publications
5 国際会議録 100 mm 4HN-SiC Wafers with Zero Micropipe Density R.T. Leonard, Y. Khlebnikov, A.R. Powell, C. Basceri, M.F. Brady Trans Tech Publications	11 国際会議録 Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers N.A. Mahadik, R.E. Stahlbush, J.D. Caldwell, M.J. O'Loughlin, A.A. Burk Trans Tech Publications
6 国際会議録 SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices A.A. Burk, M.J. O'Loughlin, J.J. Sumakeris, C. Hallin, E. Berkman Trans Tech Publications	12 国際会議録 Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices M. O'Loughlin, A. Burk Jr., D. Tsvetkov, S. Ustin, J.W. Palmour Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12