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Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC

著者名:
掲載資料名:
Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005
シリーズ名:
Materials science forum
シリーズ巻号:
527-529
発行年:
2006
パート:
1
開始ページ:
79
終了ページ:
82
総ページ数:
4
出版情報:
Stafa-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878494255 [0878494251]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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