Fundamental Limitations of SiC PVT Growth Reactors with Cylindrical Heaters

Fundamental Limitations of SiC PVT Growth Reactors with Cylindrical Heaters

著者名:

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

1

開始ページ:

15

終了ページ:

20

総ページ数:

6

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

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2 国際会議録 Influence of the Crystal Thickness on the SiC PVT Growth Rate Cherednichenko, D.I., Khlebnikov, Y.I., Drachev, R.V., Khlebnikov, I.I., Sudarshan, T.S. Trans Tech Publications	8 国際会議録 Behavior of Particles in the Growth Reactor and their Effect on Silicon Carbide Epitaxial Growth T. Rana, H.Z. Song, M.V.S. Chandrashekhar, T.S. Sudarshan Trans Tech Publications
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