Modification of Ge2Sb2Te5 by the Addition of SiOx for Improved Operation of Phase Change Random Access Memory | 東京工業大学附属図書館文献データベース

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Modification of Ge2Sb2Te5 by the Addition of SiOx for Improved Operation of Phase Change Random Access Memory

著者名:

Kim, Kijoon H.P.

Shin, Woong-Chul

Kang, Youn-Seon

さらに 5 件

掲載資料名:

Materials and devices for smart systems II : symposium held November 28-December 1, 2005, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

888

発行年:

2006

開始ページ:

137

終了ページ:

144

総ページ数:

8

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998421 [155899842X]

言語:

英語

請求記号:

M23500/888

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015812
シリーズID:	PA00000011
会議名:	Symposium on materials and devices for smart systems
回次:	2nd
会議開催地:	Boston, MA, USA
会議開催年:	2005.11.28-2005.12.01

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