INCREASED UNIFORMITY OF SILICON NEEDED FOR CRITICAL DEVICES. HOW CAN WE IMPROVE THE FLOAT ZONE PROCESS?
- 著者名:
- Kern, Edward L.
- 掲載資料名:
- Materials processing in the reduced gravity environment of space : proceedings of the Materials Research Society Annual Meeting, November 1981, Boston Park Plaza Hotel, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 9
- 発行年:
- 1982
- 開始ページ:
- 445
- 終了ページ:
- 448
- 総ページ数:
- 4
- 出版情報:
- New York: North-Holland
- ISSN:
- 02729172
- ISBN:
- 9780444006912 [0444006915]
- 言語:
- 英語
- 請求記号:
- M23500/9
- 資料種別:
- 国際会議録
類似資料:
Materials Research Society |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society, SPIE-The International Society for Optical Engineering |
4
国際会議録
Defect Induced Charge Transfer Losses in High Resistivity Float Zone Silicon Charge Coupled Devices
Electrochemical Society |
MRS - Materials Research Society |
American Institute of Chemical Engineers |
SPIE - The International Society of Optical Engineering |
Electrochemical Society |
12
国際会議録
Vacancy-Phosphorous Defect Complex in as-grown, Ultra Pure, Float Zone Single Crystal Silicon
Electrochemical Society |