Epitaxial GaN Layer Growth Using Nitrogen Enriched TiN Buffer Layers

Epitaxial GaN Layer Growth Using Nitrogen Enriched TiN Buffer Layers

著者名:

Ito, Kazuhiro

掲載資料名:

Solid-state lighting materials and devices : symposium held April 18-19, 2006, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

916

発行年:

2006

開始ページ:

71

終了ページ:

76

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998721 [1558998721]

言語:

英語

請求記号:

M23500/916

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015796
シリーズID:	PA00000011
会議名:	Symposium on solid-state lighting materials and devices
回次:	2006
会議開催地:	San Francisco, CA, USA
会議開催年:	2006.04.18-2006.04.19

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