Blank Cover Image

Microphotoluminescence Studies on Single GaN Nanocolumns

著者名:
Sebald, K.
Gutowski, J.
Thillosen, N.
Montanari, S.
Meijers, R.
Calarco, R.
Kaluza, N.
Hardtdegen, H.
Luth, H.
さらに 4 件
掲載資料名:
GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
892
発行年:
2006
開始ページ:
805
終了ページ:
812
総ページ数:
8
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558998469 [1558998462]
言語:
英語
請求記号:
M23500/892
資料種別:
国際会議録

類似資料:

1 国際会議録 Micro-Photoluminescence studies of excitonic and multiexcitonic states of quantum dot-like localization centers in InGaN/GaN structures

Sebald, K., Lohmeyer, H., Gutowski, J., Einfeldt, S., Roder, C., Hommel, D.

Materials Research Society
7 国際会議録 Micro-Raman scattering and microphotoluminescence on GaN materials grown on sapphire by metalorganic vapor deposition

Feng,Z.C., Wang,W., Liu,W., Chua,S.J., Evans,G.A., Kuball,M., Williams,K.P.J., Pitt,G.D.

SPIE - The International Society for Optical Engineering
2 国際会議録 Spatially Resolved Characterization of Plastic Deformation Induced by Focused-Ion Beam Processing in Structured InGaN/GaN Layers

R. Barabash, G. Ice, R. Kroger, H. Lohmeyer, K. Sebald, J. Gutowski, I. Bottcher, D. Hommel, W. Liu, J.-S. Chung

Materials Research Society
8 国際会議録 Exciton Luminescence of Single-Crystal GaN

Mullhauser, J. R., Brandt, O., Yang, H., Ploog, K. H.

MRS - Materials Research Society
3 国際会議録 Weak Antiocalization in Polarization-Doped AlGaN/GaN Heterostructures

Thillosen, Nicolas Henri, Schapers, Thomas, Kaluza, Nicoleta, Hardtdegen, Hilde, Guzenko, Vitaliy

Materials Research Society
9 国際会議録 Ion Beam Synthesis of Buried Ion Disilicide

Radermacher K., Mantl S., Apetz R., Dieker C., Luth H.

Kluwer Academic Publishers
4 国際会議録 InGaN/GaN nanocolumn LEDs emitting from blue to red

K. Kishino, A. Kikuchi, H. Sekiguchi, S. Ishizawa

SPIE - The International Society of Optical Engineering
10 国際会議録 Study of laser die release by Q-switched Nd:YAG laser pulses

Karlitskaya, N.S., de Lange, D.F., Sanders, R., Meijer, J.

SPIE - The International Society of Optical Engineering
5 国際会議録 GaN/Gd2O3/GaN Single Crystal Heterostructure*

Hong, M, Kwo, J., Chu, S.N.G., Mannaerts, J.P., Dabbahg, G., Kortan, A.R., Ng, H.M, Cho, A.Y., Anseim, K.A., Lee, C.M, …

Electrochemical Society
11 国際会議録 GaN Power Devices

Pearton, S.J., Ren, F., Zhang, A.P., Dang, G., Cac, X.A., Lee, K.P., Cho, H., Gila, B.P., Johnson, J.W., Monier, C., …

Electrochemical Society
6 国際会議録 Photoluminescence and Raman Scattering Studies of GaN Nanowires Obtained by Top-down and Bottom-up Approaches

Toma Stoica, Anna Haab, David Griesche, Martin Mikulics, Friederich Limbach, Timo Schumann, Tobias Gotschke, Eli Sutter, …

Materials Research Society
12 国際会議録 AIGaN/GaN MBE heterostructures: polarization effects and their implication on electronic properties

Rizzi,A., Lantier,R., Kocan,M., Dorner,D., Luth,H., Catellani,A.

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12