* MOCVD Growth and Characterization of AlGaInN Nanowires and Nanostructures

* MOCVD Growth and Characterization of AlGaInN Nanowires and Nanostructures

著者名:

Han, Jung

掲載資料名:

GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

892

発行年:

2006

開始ページ:

789

終了ページ:

798

総ページ数:

10

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998469 [1558998462]

言語:

英語

請求記号:

M23500/892

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015789
シリーズID:	PA00000011
会議名:	Symposium on GaN, AIN, InN and related materials
回次:	2005
会議開催地:	Boston, MA, USA
会議開催年:	2005.11.28-2005.12.02

類似資料:

1 国際会議録 Vapor-Liquid-Solid Growth of III-Nitride Nanowires and Heterostructures by Metal-Organic Chemical Vapor Deposition Su, J., Gherasimova, M., Cui, G., Han, J., Lim, S., Ciuparu, D., Pfefferle, L., He, Y., Nurmikko, A. V., Broadbridge, … Materials Research Society	7 国際会議録 High Power 330 nm AlInGaN UV LEDs In the High Injection Regime Gherasimova, M, Su, J., Cui, G., Han, J., Peng, H., Makarona, E., He, Y., Song, Y.-K., Nurmikko, A.V. Materials Research Society
2 国際会議録 Growth, Characterization, and Application of High Power III-Nitride Ultraviolet Emitters Han, J., Jeon, S.-R., Gherasimova, M., Song, Y.-K., Nurmikko, A. V., Zhou, L., Goetz, W., Krame, M. Electrochemical Society	8 国際会議録 Performance and application of high-power ultraviolet AlGalnN light-emitting diodes Han, J., Jeon, S.-R., Gherasimova, M., Su, J., Cui, G., Peng, H., Makarona, E., He, Y., Song, Y.-K., Nurmikko, A. V., … SPIE - The International Society of Optical Engineering
3 国際会議録 AlGaInN Quaternary Alloys by MOCVD McIntosh, F. G., Piner, E., Boutros, K., Roberts, J. C., He, Y., Moussa, M., El-Masry, N., Bedair, S. M. MRS - Materials Research Society	9 国際会議録 Characterization of AlGaInN heterostructures grown by OMVPE Bour, D.P., Chung, H.F., Gotz, W., Romano, L., Krusor, B.S., Ponce, F.A., Johnson, N.M., Bringans, R.D. Electrochemical Society
4 国際会議録 MOCVD Growth of AlGaInN for UV Emitters Han, J., Crawford, M. Electrochemical Society	10 国際会議録 Effects of buffer layer growth conditions on the GaN epilayer quality by MOCVD Juang,F.-S., Su,Y.K., Chang,S.-J., Chu,T.K., Chen,C.S., Chi,L.W., Lam,K.T. SPIE - The International Society for Optical Engineering
5 国際会議録 Growth, Characterization, and Application of High Power III-Nitride Ultraviolet Emitters Ren, Z., Jeon, S. R., Gherasimova, M., Cui, G., Han, J., Peng, H., Song, Y. K., Nurmikko, A. V., Zhou, L., Goetz, W., … Materials Research Society	11 国際会議録 MOCVD Growth of Indium Nitride Chen, K.-H., Huang, J.S., Yang, F.S., Yang, Y.J., Chen, L.C. Electrochemical Society
6 国際会議録 Characterization of OMVPE-Grown AlGaInN Heterostructures Bour, D. P., Chung, H. F., Gotz, W., Romano, L., Krusor, B. S., Hofstetter, D., Rudaz, S., Kuo, C. P., Ponce, F. A., … MRS - Materials Research Society	12 国際会議録 THE GROWTH MECHANISMS OF GaSb EPITAXIAL FILM BY MOCVD Ueng, H.Y., Chen, S.M., Su, Y.K., Juang, F.S. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12